Improvements were made to the device design including a semitransparent Ni/Au contact layer and a GaN:Mg cap layer, which dramatically increased device response by enhancing the carrier collection efficiency. By dividing the constant in half, this formula (in terms of diameter) becomes: C (mm) 1. These additives also make it possible to increase the UV cut-off wavelength (at which the transmittance factor is 1). UV-absorbing additives should be used to protect this material from UV rays and avoid premature ageing.

The device response drops four orders of magnitude by 275 nm and remains at low response for the entire near-ultraviolet and visible spectrum. This low cut-off frequency can be found using the equation below.3 C 3.412 r C is the low cutoff wavelength, and r is the radius of the cylinder. Owing to its low crystallinity, it is highly transparent and can be used to make windows, visors, lenses, etc. The peak responsivity for -5 V bias is 0.11 A/W at 232 nm, corresponding to an internal quantum efficiency greater than 90%. Improvements were made to the device design including a semitransparent Ni/Au contact layer and a GaN:Mg cap layer, which dramatically increased device response by enhancing the carrier collection efficiency.ĪB - We report the fabrication and characterization of AlxGa1-xN photodiodes (x∼0.70) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The device response drops four orders of magnitude by 275 nm and remains at low response for the entire near-ultraviolet and visible spectrum. N2 - We report the fabrication and characterization of AlxGa1-xN photodiodes (x∼0.70) grown on sapphire by low-pressure metalorganic chemical vapor deposition. T1 - Solar-blind AlGaN photodiodes with very low cutoff wavelengthĬopyright 2017 Elsevier B.V., All rights reserved.

Low-cut off wavelength